powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 1 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product n-channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t a = 25c 30v 18.6m ? @ v gs = 10v 8.0a 26.5m ? @ v gs = 4.5v 6.5a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? backlighting ? dc-dc converters ? power management functions features ? low r ds(on) ? ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so-8 enabling smaller end product ? 100% uis (avalanche) rated ? 100% rg tested ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: powerdi3333-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.072 grams (approximate) ordering information (note 4) part number case packaging DMN3029LFG-7 powerdi3333-8 2000 / tape & reel DMN3029LFG-13 powerdi3333-8 3000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information bottom view top view internal schematic top view powerdi3333-8 1 2 3 4 8 7 6 5 n39 = product marking code yyww = date code marking yy = last digit of year (ex: 10 for 2010) ww = week code (01 ? 53) s s s g d d d d pin 1 green
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 2 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 25 v continuous drain current (note 5) v gs = 10v steady state t a = +25c t a = +70c i d 5.3 4.2 a continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 8.0 6.3 a continuous drain current (note 6) v gs = 10v t 10s t a = +25c t a = +70c i d 9.5 7.7 a continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 6.5 4.9 a continuous drain current (note 6) v gs = 4.5v t 10s t a = +25c t a = +70c i d 7.8 6.2 a pulsed drain current (note 7) i dm 70 a avalanche current (notes 7 & 8) i ar 18 a repetitive avalanche energy (notes 7 & 8) l = 0.1mh e ar 16 mj thermal characteristics characteristic symbol max unit power dissipation (note 5) p d 1.0 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 130.6 c/w power dissipation (note 6) p d 2.07 w thermal resistance, junction to ambient @t a = +25c (note 6) r ja 62.5 c/w power dissipation (note 6) t 10s p d 3.0 w thermal resistance, junction to ambient @t a = +25c (note 6) t 10s r ja 43.8 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 6. device mounted on 2? x 2? fr-4 pcb with high coverage 2 oz. copper, single sided. 7. repetitive rating, pulse width limited by junction temperature. 8. i ar and e ar rating are based on low frequency and duty cycles to keep t j = +25c. 0.1 1 10 100 v , drain-source voltage (v) fig. 1 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w t = 150c t = 25c single pulse j(max) a 0 50 100 150 200 250 300 350 400 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 p , p eak t r a n sie n t p o iwe r (w) (pk) single pulse r = 60c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t)
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 3 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r (t)=r(t) * r ja ja ja r = 60c/w duty cycle, d = t1/ t2 d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss - - 0.1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 25v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) 0.9 1.2 1.8 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 13,5 18.6 m v gs = 10v, i d = 10a - 22 26.5 v gs = 4.5v, i d = 7.5a forward transfer admittance |y fs | - 13.0 - s v ds = 5v, i d = 10a diode forward voltage v sd - 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 10) input capacitance c iss - 580 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 110 - reverse transfer capacitance c rss - 70 - gate resistance r g - 2.0 3.0 v ds = 0v, v gs = 0v, f = 1mhz total gate charge v gs = 4.5v q g - 5.3 - nc v gs = 4.5v, v ds = 15v, i d = 10a total gate charge v gs = 10v q g - 11.3 - v gs = 10v, v ds = 15v, i d = 10a gate-source charge q g s - 1.9 - gate-drain charge q g d - 1.9 - turn-on delay time t d ( on ) - 4.4 - ns v gs = 10v, v ds = 15v, r l = 15 ? , r g = 6 ? turn-on rise time t r - 4.6 - ns turn-off delay time t d ( off ) - 19.5 - ns turn-off fall time t f - 5.8 - ns notes: 9. short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to production testing.
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 4 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product fig. 4 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 4.0v gs v = 10v gs fig. 5 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 85c gs v = 125c gs v = 25c gs v = -55c gs v = 150c gs v = 5v ds 01 02 0 15 25 30 fig. 6 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 5 r , drain-source on-resistance ( ) ds(on) 0 0.004 0.008 0.012 0.016 0.02 0.024 0.028 0.032 v = 4.5v gs v = 10v gs 0 5 10 15 20 25 30 i , drain current (a) d fig. 7 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 t = 85c a t = 25c a t = -55c a t = 150c a v = 4.5v gs t = 125c a fig. 8 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson 0.6 0.8 1.0 1.2 1.4 1.6 v = 4.5v i = 5a gs d v = 10v i = 10a gs d fig. 9 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 v = 4.5v i = 5a gs d v = 10v i = 10a gs d
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 5 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product fig. 10 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) 0 0.5 1 1.5 2 i = 1ma d i = 250a d 0 0.4 0.6 0.8 1.0 1.2 fig. 11 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r e n t (a) s t = 25c a 0 5 10 15 20 25 30 0.2 04 8121620 fig. 12 typical total capacitance v , drain-source voltage (v) ds 10 1,000 c , c a p a c i t an c e (p f ) t 100 f = 1mhz c iss c rss c oss 01 0 2 03 0 fig. 13 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i , leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 6 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. powerdi3333-8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? 0.20 l 0.35 0.45 0.40 l1 ? ? 0.39 e ? ? 0.65 z ? ? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 14 85 x y y1 y3 y2 x2 c 14 85 g g1
powerdi is a registered trademark of diodes incorporated. DMN3029LFG document number: ds35448 rev. 7 - 2 7 of 7 www.diodes.com october 2012 ? diodes incorporated DMN3029LFG advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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